Direct wafer bonding of GaAs/Si by hydrophobic plasma-activated bonding

Yongqiang Zhao; Wen Liu; Yidi Bao; Jing Ma; Yusheng Liu; Xiaodong Wang; Fuhua Yang

doi:10.1117/12.2549964

20 December 2019 Direct wafer bonding of GaAs/Si by hydrophobic plasma-activated bonding

Yongqiang Zhao, Wen Liu, Yidi Bao, Jing Ma, Yusheng Liu, Xiaodong Wang, Fuhua Yang

Proceedings Volume 11209, Eleventh International Conference on Information Optics and Photonics (CIOP 2019); 112094V (2019) https://doi.org/10.1117/12.2549964
Event: Eleventh International Conference on Information Optics and Photonics (CIOP 2019), 2019, Xi'an, China

Abstract

In this paper, the hydrophobic plasma-activated bonding of GaAs/Si was studied. We systematically analyzed the effect of different power, gas flow rate and activation time of plasma to the roughness of GaAs and Si wafers. The roughness of GaAs wafers decreased with increasing of power and activation time of plasma. The roughness of Si wafers did not change significantly with increasing of power of plasma, and decreased first and then increased with increasing of gas flow rate of Ar in our experiment. The number of dangling bonds in the surface of GaAs and Si wafers was increasing with the activation time. When the activation time was 3 minutes, the GaAs/Si wafers were successfully bonded under different power of plasma. By scanning acoustic microscope (SAM) testing, it was found that when the power was 200W, the bonded GaAs/Si wafer had the best bonding interface. Furthermore, the GaAs/Si bonding internal mechanism by plasma-activated bonding method was analyzed by testing the chemical composition of the bonding interface.

Citation Download Citation

Yongqiang Zhao, Wen Liu, Yidi Bao, Jing Ma, Yusheng Liu, Xiaodong Wang, and Fuhua Yang "Direct wafer bonding of GaAs/Si by hydrophobic plasma-activated bonding", Proc. SPIE 11209, Eleventh International Conference on Information Optics and Photonics (CIOP 2019), 112094V (20 December 2019); https://doi.org/10.1117/12.2549964

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