The application of a Rapid Probe Microscope (RPM) for investigating 1D and 2D structures from EUV lithography

Andrew D. L. Humphris; Alain Moussa; Mircea Dusa; Anne-Laure Charley; Elis Newham; Jenny Goulden; Lei Feng; Christopher Bevis

doi:10.1117/12.2552054

20 March 2020 The application of a Rapid Probe Microscope (RPM) for investigating 1D and 2D structures from EUV lithography

Andrew D. L. Humphris, Alain Moussa, Mircea Dusa, Anne-Laure Charley, Elis Newham, Jenny Goulden, Lei Feng, Christopher Bevis

Author Affiliations +

Proceedings Volume 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV; 113251M (2020) https://doi.org/10.1117/12.2552054
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

Atomic Force Microscopy (AFM) is a proven technique applied in research environments, most commonly in materials science and biological research. More recently, requirements in semiconductor manufacturing advocate that probe microscopy has potential to assist with the new metrology techniques associated with device scaling and the corresponding increase in 3D structures. In this paper a novel form of AFM called the Rapid Probe Microscope (RPM) will be demonstrated operating at high data acquisition rates; with images collected in seconds, combined with the ability to characterise individual 3D structures with sub nanometre accuracy. The capability of the RPM will be illustrated by measuring a suite of 2D EUV posts of 26nm dimension in staggered topology with 40nm minimum pitch. These structures were developed as part of IMEC’s EUV lithography patterning development program. The high throughput of the RPM enables the collection of multiple site and multiple pitch data, from a focused exposure matrix. Automated batch processing tools have been developed to enable the effective analysis of the high volume of data produced. The data can then be extensively interrogated to fully understand how the structure of the posts is related to the lithography process. In addition to a statistical analysis of the entire pillar population, the analysis tools can isolate and measure each individual pillar, providing the ability to compare the height and shape on an isolated pillar by pillar bases.

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Andrew D. L. Humphris, Alain Moussa, Mircea Dusa, Anne-Laure Charley, Elis Newham, Jenny Goulden, Lei Feng, and Christopher Bevis "The application of a Rapid Probe Microscope (RPM) for investigating 1D and 2D structures from EUV lithography", Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113251M (20 March 2020); https://doi.org/10.1117/12.2552054

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KEYWORDS

3D image processing

Extreme ultraviolet lithography

Microscopes

3D metrology

Extreme ultraviolet

Data analysis

Finite element methods

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