Paper
20 March 2020 The improvement of measurement accuracy of SADP pitch walking issue
Author Affiliations +
Abstract
In the 14nm FinFET(Fin-shaped Field-Effect Transistor) node, SADP(Self-Aligned Double Patterning) technology has been introduced to produce Fin because of the exposure limit of 193nm DUV immersion lithography. As is known to all, pitch walking issue appears when the technology comes to SADP, so how to accurately measure pitch walking is particularly important. In this paper, we use CD-SEM(Critical Dimension Scanning Electron Microscope) to measure the CD(Critical Dimension) of Fin pitch inline, and evaluate different parameter settings or machine type to improve the accuracy of the measurement results. For sub-nanometer accuracy of line width measurement, TEM(Transmission Electron Microscope) image is used to calibrate the line width measurements as a kind of reference metrology.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pei Liu, Cheng-Zhang Wu, Hung-Wen Chao, Wenzhan Zhou, Yu Zhang, Chan-Yuan Hu, Yujie Xu, Jhen-Cyuan Li, Yen-Chan Chiu, Chun-Han Liu, Ran-Fu Yang, and Chi-Hung Wang "The improvement of measurement accuracy of SADP pitch walking issue", Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113252Z (20 March 2020); https://doi.org/10.1117/12.2552057
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Transmission electron microscopy

Calibration

Semiconducting wafers

Electron microscopes

Fin field effect transistors

Image filtering

Etching

RELATED CONTENT


Back to Top