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Two-dimensional van der Waals materials are attractive for photonics and optoelectronics due to distinctive layerdependent optical properties. Optical properties based on light-matter interactions have been revealed by modern imaging and spectroscopy techniques. Hyperspectral imaging microscopy working in line-scan mode (push-broom microspectroscopy) can provide abundant spectral information covering a large area compared to conventional spectroscopy techniques, with a higher acquisition speed than point-scan techniques such as atomic force microscopy and Raman imaging microscopy. This contribution studies in-depth the reconstruction of 3D datacubes and the extraction of optical responses of the sample. Monolayer MoS2, a subclass of semiconducting two-dimensional materials, is fabricated by the mechanical exfoliation method on the SiO2/Si substrate with an oxide thickness of 285 nm. The isolated monolayer MoS2 is observed and identified by a conventional optical microscope. The custom-built push-broom microspectroscope is utilized to scan the region of interest, with the whole spectrum of every line recorded at each frame. The spectral information of every point is collected and 3D spectral data sets are reconstructed for feature extraction and property analysis. To realize the thickness mapping of flakes, linear unmixing is employed to calculate the abundance of isolated monolayer MoS2 on the SiO2/Si substrate, improving flake identification performances. The characteristic spectrum of monolayer MoS2 is acquired by averaging the spectrum from the monolayer MoS2 flake. Furthermore, the optical dielectric response is further analyzed by Kramers-Kronig constrained analysis and Fresnel-law-based analysis. The optical dielectric function is calculated and compared based on the refractive index and medium thickness. This detailed analysis of optical dielectric responses highlights the feasibility of push-broom microspectroscopy for two-dimensional materials characterization.
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