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6 April 2020 III-V lasers directly grown on silicon (Conference Presentation)
Jianjun Zhang
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Proceedings Volume 11364, Integrated Photonics Platforms: Fundamental Research, Manufacturing and Applications; 113640W (2020) https://doi.org/10.1117/12.2558610
Event: SPIE Photonics Europe, 2020, Online Only
Abstract
The direct epitaxial growth of III-V materials on Si substrates is one of the most promising methods to provide Si-based lasers for monolithic integration. Direct epitaxy of III-V on Si encounters three major challenges, which are large lattice mismatch, polarity difference, and thermal expansion mismatch, leading to threading dislocations, antiphase boundaries, and microthermal cracks, respectively. In this talk, I will show that, by homoepitaxial growth on a U-shaped patterned Si (001) substrate, highly uniform (111)-faceted Si sawtooth with underlying hollow structures can be formed. The (111)-faceted sawtooth structures can effectively annihilate the antiphase boundaries and terminate mostly the lattice mismatch induced dislocations at the III-V/Si interface, while the hollow structures can effectively reduce the thermal stress. The GaAs layers on (111)-faceted hollow Si (001) show a threading dislocation density of ~106/cm2 via the electron channeling contrast image method. The O-band emission of InAs/GaAs QDs on Si (001) shows similar intensity to that on the GaAs substrate. With such high quality III-V materials on Si, we demonstrate the high performance microcavity, microdisk and electrically pumped lasers both on Si and SOI substrates.
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Jianjun Zhang "III-V lasers directly grown on silicon (Conference Presentation)", Proc. SPIE 11364, Integrated Photonics Platforms: Fundamental Research, Manufacturing and Applications, 113640W (6 April 2020); https://doi.org/10.1117/12.2558610
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KEYWORDS
Silicon
Semiconductor lasers
Gallium arsenide
Thermal effects
Epitaxy
Interfaces
Optical microcavities
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