Paper
11 October 1989 Optimized Resist Process For High Na G-Line Lenses
Mark G. Bigelow, Harrie van der Putten
Author Affiliations +
Proceedings Volume 1138, Optical Microlithography and Metrology for Microcircuit Fabrication; (1989) https://doi.org/10.1117/12.961742
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Abstract
Statistically designed screening experiments were conducted with several commercially available g-line resists to determine the most significant process factors for maximizing Depth of Focus for a new g-line lens with an NA of 0.43 and a field diameter of 21.2 mm. The experiments determined the significance of process factors such as Softbake Temperature, Resist Coat Thickness, Post Exposure Bake Temperature, Develop Temperature, Develop Time, Develop Concentration and Develop Agitation. This experimental approach lead to a much shorter process evaluation cycle. Comparative results of Depth of Focus for each of the materials tested are reported along with extended results of the optimized process critical dimension bias and linearity. First time extended results with the Zeiss 107861 lens are reported for the optimized process, which was developed for one of the resists, to achieve a Usable Depth of Focus of 2.0 μm at 0.7 μm resolution.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark G. Bigelow and Harrie van der Putten "Optimized Resist Process For High Na G-Line Lenses", Proc. SPIE 1138, Optical Microlithography and Metrology for Microcircuit Fabrication, (11 October 1989); https://doi.org/10.1117/12.961742
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Thin film coatings

Optical lithography

Metrology

Silver

Photoresist processing

Semiconducting wafers

Thallium

Back to Top