Rapid Thermal Annealing Of S-Implanted Sent-Insulating InP

Parimala Karighattam; D. A. Thompson

doi:10.1117/12.962018

28 November 1989 Rapid Thermal Annealing Of S-Implanted Semi-Insulating InP

Parimala Karighattam, D. A. Thompson

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962018
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

Semi-insulating Fe-doped InP samples have been implanted with 60 keV S+ ions at 300 K, over the dose range of 5x10¹² to 5x10¹⁵ ions cm-2. Subsequent to implantation, they have been annealed, without encapsulation, using Rapid thermal annealing procedures at temperatures ranging from 650-800°C and for times 2-50 s. The samples have been analysed using Photoluminescence and Hall effect/Conductivity measurements in order to establish the anneal conditions necessary to produce best dopant activation. Results indicate the best anneal condition to be ~800°C for 10 s. Maximum electrical activations ~66% and carrier concentrations up to 3x10¹⁹ cm-3 have been obtained. PL spectra of S+ implanted and annealed InP show new features at 1.378-1.380 eV that can be ascribed to S impurities. Samples implanted with lx10¹⁴ cm-2 and 1x10¹⁵cm-2 (S+Si) ions have also been studied.

Citation Download Citation

Parimala Karighattam and D. A. Thompson "Rapid Thermal Annealing Of S-Implanted Semi-Insulating InP", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962018

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