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17 April 2020 Thermal conductivity of SiN flims with different thicknesses by 3ω method
Yuheng Huang, Huaixin Guo, Tangsheng Chen
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Proceedings Volume 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications; 1145509 (2020) https://doi.org/10.1117/12.2557726
Event: Sixth Symposium on Novel Photoelectronic Detection Technology and Application, 2019, Beijing, China
Abstract
The 3ω method has proven very useful for determining the thermal conductivity of the film and the substrate. According to the principle of 3ω method, a thermal conductivity test platform was built and the SiO2 film was measurement to verify the accuracy of experimental system. In this work, the different thicknesses of SiN films were grown by PECVD and the thermal conductivity was measured by 3ω method. In order to improve the accuracy of the thermal conductivity measurement, the influence of film-substrate interfacial thermal resistance was introduced into the heat transfer model. The experimental results show that the thermal conductivity of SiN films increases with increasing thickness, and the correction thermal conductivity is obviously higher than the original value.
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Yuheng Huang, Huaixin Guo, and Tangsheng Chen "Thermal conductivity of SiN flims with different thicknesses by 3ω method", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 1145509 (17 April 2020); https://doi.org/10.1117/12.2557726
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KEYWORDS
Resistance
Silicon
Thin films
Plasma enhanced chemical vapor deposition
Thermal effects
Interfaces
Thermal modeling
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