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17 April 2020 Silicon hybrid photodetector based on die-to-die bonding
Xiaowen Gu, Guanyu Li, Fei Wang, Jiayun Dai, Yuechan Kong
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Proceedings Volume 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications; 1145556 (2020) https://doi.org/10.1117/12.2565048
Event: Sixth Symposium on Novel Photoelectronic Detection Technology and Application, 2019, Beijing, China
Abstract
A silicon hybrid photodetector was demonstrated based on die-to-die bonding technology. The vertically incident InGaAs/InP photodetector die was integrated on silicon-on-insulator (SOI) die by using divinyldisiloxane benzocyclobutene (DVS-BCB) as adhesive layer. A grating coupler was fabricated on SOI substrate to diffract the light out of the SOI waveguide into the detector. The measured coupling efficiency output at 1550 nm for the TE mode reached to 39.8%, which is equal to 8.2 dB fiber-to-fiber loss. After integrating, when the thickness of the BCB bonding layer was 380 nm, the optical loss reached to 13.8 dB with 30×30 μm2 device. The measured dark current, bandwidth and responsivity of the hybrid InGaAs/InP photodetector with light absorbing mesa of 10×10 μm2 were 37.7 nA, 30.9 GHz and 0.48 A/W respectively at -3 V DC bias.
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Xiaowen Gu, Guanyu Li, Fei Wang, Jiayun Dai, and Yuechan Kong "Silicon hybrid photodetector based on die-to-die bonding", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 1145556 (17 April 2020); https://doi.org/10.1117/12.2565048
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KEYWORDS
Photodetectors
Silicon
Waveguides
Optical alignment
Integrated photonics
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