Carrier multiplication in PbS quantum dots anchored on Au tip using conductive atomic force microscopy

Sung-Tae Kim

doi:10.1117/12.2577345

20 August 2020 Carrier multiplication in PbS quantum dots anchored on Au tip using conductive atomic force microscopy

Sung-Tae Kim

Proceedings Volume 11496, New Concepts in Solar and Thermal Radiation Conversion III; 114960F (2020) https://doi.org/10.1117/12.2577345
Event: SPIE Optical Engineering + Applications, 2020, Online Only

Abstract

Carrier multiplication (CM) is the amplification of the excited carrier density by two times of more when the incident photon has larger energy than two times band gap of semiconductors. Previously, most of studies in CM have been carried out with optical and device approaches. So, we suggest a unique approach to investigate the carrier multiplication via photocurrent measurement using the PbS quantum dot (QD)-decorated AFM tip in conductive atomic force microscope (CAFM). The quantum yield (QY) evaluated from photocurrent results represents a step-like behavior, and the carrier multiplication (CM) threshold energy is as low as twice the band gap owing to efficiently extracting photogenerated carriers with the short channel and the role of graphene for a counter electrode. This CAFM-based photocurrent technique suggests a simple and straightforward method to evaluate the CM phenomena in low dimensional materials.

Conference Presentation

Citation Download Citation

Sung-Tae Kim "Carrier multiplication in PbS quantum dots anchored on Au tip using conductive atomic force microscopy", Proc. SPIE 11496, New Concepts in Solar and Thermal Radiation Conversion III, 114960F (20 August 2020); https://doi.org/10.1117/12.2577345

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