Low energy of the photons of intense mid-infrared lasers favors generation of highly non-equilibrium free-carrier (FC) plasmas with high ponedromotive energy of conduction-band electrons. The plasmas are characterized by enlarged electron-phonon collision time, low free-carrier absorption, and extended lifetime of plasma’s non-equilibrium states in contrary to near-infrared and visible wavelengths. We propose a model that incorporates an energy-resolved rate equation for the laser-generated conduction-band electron density, the Keldysh photoionization, the Vinogradov free-carrier absorption, and the low-collision-rate model of transient optical response. We discuss proper criteria to evaluate threshold of laser-induced damage by applying the model to typical semiconductors.
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