Advances in defect performance in metal oxide photoresists for EUV lithography

Stephen T. Meyers; Jan Doise; Michael Kocsis; Shu-Hao Chang; Benjamin L. Clark; Peter De Schepper; Jason Stowers; Alan Telecky; Andrew Grenville; Amrit Narasimhan; Danilo De Simone; Geert Vandenberghe; Philippe Foubert; Poulomi Das; Christophe Beral; Yannick Feurprier; Tomoya Onitsuka

doi:10.1117/12.2584769

22 February 2021 Advances in defect performance in metal oxide photoresists for EUV lithography

Stephen T. Meyers, Jan Doise, Michael Kocsis, Shu-Hao Chang, Benjamin L. Clark, Peter De Schepper, Jason Stowers, Alan Telecky, Andrew Grenville, Amrit Narasimhan, Danilo De Simone, Geert Vandenberghe, Philippe Foubert, Poulomi Das, Christophe Beral, Yannick Feurprier, Tomoya Onitsuka

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Proceedings Volume 11609, Extreme Ultraviolet (EUV) Lithography XII; 116090K (2021) https://doi.org/10.1117/12.2584769
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

Inpria has pioneered the development of high-resolution metal oxide (MOx) photoresists designed to unlock the full potential of EUV lithography. In addition to resolution, LWR, and sensitivity to enable advanced process nodes, there are also stringent defectivity requirements that must be realized for any resist system. We will review advances in post-etch defectivity based on: resist design and formulation, track process design, developer design, and etch optimization. We will present data supporting each of these topics quantifying the defect impact and will describe improvement strategies to take full advantage of such MOx resist systems.

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Stephen T. Meyers, Jan Doise, Michael Kocsis, Shu-Hao Chang, Benjamin L. Clark, Peter De Schepper, Jason Stowers, Alan Telecky, Andrew Grenville, Amrit Narasimhan, Danilo De Simone, Geert Vandenberghe, Philippe Foubert, Poulomi Das, Christophe Beral, Yannick Feurprier, and Tomoya Onitsuka "Advances in defect performance in metal oxide photoresists for EUV lithography", Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 116090K (22 February 2021); https://doi.org/10.1117/12.2584769

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