The importance of in-die sampling using E-beam solution on yield improvement

Yu Zhang; Biqiu Liu; Cong Zhang; Yuyang Bian; Song Gao; Yifei Zhu; Xiaobo Guo; Jun Huang; Yaniv Abramovitz; Qiang Zhou; Uri Smolyan; Omri Baum; Shmuel Ben Nissim; Alexander Vipolzov

doi:10.1117/12.2585391

19 August 2021 The importance of in-die sampling using E-beam solution on yield improvement

Yu Zhang, Biqiu Liu, Cong Zhang, Yuyang Bian, Song Gao, Yifei Zhu, Xiaobo Guo, Jun Huang, Yaniv Abramovitz, Qiang Zhou, Uri Smolyan, Omri Baum, Shmuel Ben Nissim, Alexander Vipolzov

Author Affiliations +

Proceedings Volume 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV; 116111X (2021) https://doi.org/10.1117/12.2585391
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

As technology progress with scaling to meet the market requirements, the patterning characterization of dense features suffers a significant challenge for current optic tools, and measurement accuracy will be an important index and great challenge as well. Patterning can mostly be characterized with index of overlay (OVL) and CDU (critical dimension uniformity) measurement. When you break down the budget of the overlay error, one of the challenges is a gap of measurement results between scribe and device, where provides improper information to be used in overlay correction and causes process anomaly (excursion) detection, resulting in a low yield at the end of the production process. An eBeam tool, using high electron landing energies while utilizing the ElluminatorTM technology^[1] for improvement backscattered electrons (BSE) imaging efficiency, can be utilized to directly capture OVL performance of device unit in-die, including local and global level, due to BSE function of eBeam tool^[2]. In this paper, we demonstrate overlay measurement of M0 to Poly line in device for advanced logic node (only OVL X measurement), obtaining Overlay gap between in-die and scribe line to capture the actual behavior of device unit in-die. Massive OVL data is measured using eBeam tool with fast speed and high resolution, and local OVL results have been analyzed in detail. We’ve quantified what is the impact of overlay correction by different measurement ways whether it depends on optical tool or eBeam tool and benefits yield improvement.

Conference Presentation

Citation Download Citation

Yu Zhang, Biqiu Liu, Cong Zhang, Yuyang Bian, Song Gao, Yifei Zhu, Xiaobo Guo, Jun Huang, Yaniv Abramovitz, Qiang Zhou, Uri Smolyan, Omri Baum, Shmuel Ben Nissim, and Alexander Vipolzov "The importance of in-die sampling using E-beam solution on yield improvement", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116111X (19 August 2021); https://doi.org/10.1117/12.2585391

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available