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22 February 2021 Process variation impacts on optical overlay accuracy signature
Rawi Dirawi, Shlomit Katz, Roie Volkovich
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Proceedings Volume 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV; 116112P (2021) https://doi.org/10.1117/12.2583616
Event: SPIE Advanced Lithography, 2021, Online Only
Abstract
On Product Overlay (OPO) control is a critical factor in advanced semiconductor manufacturing. As feature sizes become smaller, OPO budgets become tighter, leaving less room for overlay (OVL) measurement inaccuracy. Over the last few years, overlay metrology’s focus has shifted inwards, towards accurate measurement conditions, as we aim to capture ever-smaller process and scanner variations. One method used to break down the OPO error budget is combining one or more accuracy flags and correlating them to various process impacts. Analyzing the overlay accuracy signature generated by accuracy flags can be useful for data validation, inspection and correlation to different processes and metrologies. In this paper, an extensive OVL accuracy experiment demonstrates the use of this new method. First, the method is applied to several wafers designed with intentional process variation, including variations in etch duration, Chemical Mechanical Polishing (CMP) duration, amorphous silicon (a-Si) thickness and titanium nitride (TiN) thickness. OVL results from the experimental wafers are compared with results from the reference (nominal) wafer.
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Rawi Dirawi, Shlomit Katz, and Roie Volkovich "Process variation impacts on optical overlay accuracy signature", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116112P (22 February 2021); https://doi.org/10.1117/12.2583616
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KEYWORDS
Semiconducting wafers
Wafer-level optics
Amorphous silicon
Chemical mechanical planarization
Etching
Tin
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