Ultrathin GaN/AlN quantum wells for deep UV emitters

Mitsuru Funato; Yoichi Kawakami

doi:10.1117/12.2577156

5 March 2021 Ultrathin GaN/AlN quantum wells for deep UV emitters

Mitsuru Funato, Yoichi Kawakami

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116860W (2021) https://doi.org/10.1117/12.2577156
Event: SPIE OPTO, 2021, Online Only

Abstract

GaN/AlN ultrathin quantum wells (QWs) were grown by metalorganic vapor phase epitaxy using a self-limiting process of GaN thickness to the monolayer (ML) level. 1 ML GaN/AlN QWs emit at 225 nm. The photoluminescence (PL) intensity ratio between low and room temperatures is improved from 0.1% for a conventional AlGaN-based QW emitting at 235 nm to 5% the 1 ML GaN QW. Further improvement to 50% was achieved by an ultrathin GaN QW on r-plane, showing promise of ultrathin GaN QWs as efficient UV emitters.

Conference Presentation

Citation Download Citation

Mitsuru Funato and Yoichi Kawakami "Ultrathin GaN/AlN quantum wells for deep UV emitters", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116860W (5 March 2021); https://doi.org/10.1117/12.2577156

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