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5 March 2021 Role of adatom adsorption and diffusion in the epitaxial growth of gallium oxide
Mengen Wang
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Proceedings Volume 11687, Oxide-based Materials and Devices XII; 1168705 (2021) https://doi.org/10.1117/12.2588301
Event: SPIE OPTO, 2021, Online Only
Abstract
Monoclinic gallium oxide is a wide-gap (4.8 eV) semiconductor with a high breakdown field. To fully exploit the applications in high power electronics, high-quality epitaxial growth of gallium oxide is required. We use density functional theory calculations to explore the adsorption of Ga and In adatoms on the Ga2O3 (010) surface and the effect of In on the growth rate. We also study the co-adsorption of Al, Ga, and O adatoms on the Ga2O3 (010) surface to reveal the role of surface reconstructions and adatom diffusion in Al incorporation in (AlxGa1−x)2O3 alloys.
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Mengen Wang "Role of adatom adsorption and diffusion in the epitaxial growth of gallium oxide", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 1168705 (5 March 2021); https://doi.org/10.1117/12.2588301
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KEYWORDS
Gallium
Oxides
Adsorption
Aluminum
Diffusion
Indium
Electronics
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