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5 March 2021 Luminescence properties of β-Ga2O3
Cuong Ton-That, Thanh Tung Huynh, Ekaterine Chikoidze, Curtis Irvine, Muhammad Zakria, Yves Dumont, Ferechteh Teherani, Eric Sandana, Philippe Bove, David Rogers, Matthew Phillips
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Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116870A (2021) https://doi.org/10.1117/12.2585041
Event: SPIE OPTO, 2021, Online Only
Abstract
We report the characteristics of luminescence bands in beta-Ga2O3 thin films and single crystals. The dominant UV emission at 3.4 eV exhibits strong thermal quenching but its peak shape remains unchanged. The blue and green bands, attributed to defects, are found to be strongly dependent on growth conditions. Additionally, we observe a distinct red luminescence at 1.9 eV upon hydrogen doping. The emergence of this emission is accompanied by substantially increased electrical conductivity. The red emission is shown to be consistent with shallow donor–deep acceptor pair recombination and will be discussed in the context of defect models.
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Cuong Ton-That, Thanh Tung Huynh, Ekaterine Chikoidze, Curtis Irvine, Muhammad Zakria, Yves Dumont, Ferechteh Teherani, Eric Sandana, Philippe Bove, David Rogers, and Matthew Phillips "Luminescence properties of β-Ga2O3", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116870A (5 March 2021); https://doi.org/10.1117/12.2585041
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KEYWORDS
Luminescence
Crystals
Hydrogen
Thin films
Ultraviolet radiation
Plasma
Pulsed laser deposition
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