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5 March 2021 Ultra-high on-chip optical gain fabricated with atomic-layer deposition technology
John-Olof Rönn, Weiwei Zhang, Zhengrui Tu, Jianhao Zhang, Eric Cassan, Zhipei Sun
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Proceedings Volume 11689, Integrated Optics: Devices, Materials, and Technologies XXV; 116890R (2021) https://doi.org/10.1117/12.2577167
Event: SPIE OPTO, 2021, Online Only
Abstract
Efficient and reliable on-chip optical amplifiers and light sources can enable versatile integration of various active functionalities on the silicon platform. Here, we discuss our recent results of ultra-high on-chip optical gain in erbium-based hybrid waveguides with a monolithic, CMOS-compatible and scalable atomic-layer deposition process. The unique layer-by-layer nature of atomic-layer deposition enables atomic scale engineering of the gain layer properties and straightforward integration with silicon integrated waveguides. We have demonstrated up to >20 dB/cm net modal gain per unit length, the highest performance achieved from erbium-based planar waveguides integrated on silicon. Our results show significant advances towards efficient on-chip amplification, opening a route to large-scale integration of various active functionalities on silicon.
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John-Olof Rönn, Weiwei Zhang, Zhengrui Tu, Jianhao Zhang, Eric Cassan, and Zhipei Sun "Ultra-high on-chip optical gain fabricated with atomic-layer deposition technology", Proc. SPIE 11689, Integrated Optics: Devices, Materials, and Technologies XXV, 116890R (5 March 2021); https://doi.org/10.1117/12.2577167
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KEYWORDS
Silicon
Waveguides
Deposition processes
Light sources
Optical amplifiers
Planar waveguides
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