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5 March 2021 Electrostatic charge sensing using nanocavity-based Raman silicon laser
Satoshi Yasuda, Yuki Takahashi, Takashi Asano, Susumu Noda, Yasushi Takahashi
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Proceedings Volume 11706, Light-Emitting Devices, Materials, and Applications XXV; 117060Q (2021) https://doi.org/10.1117/12.2577487
Event: SPIE OPTO, 2021, Online Only
Abstract
We investigated the behavior of a Raman silicon laser based on a photonic-crystal nanocavity while it was irradiated with electrostatic charges from a static-electricity generator. Laser oscillation stopped after a few seconds of a weak irradiation and the time needed for the recovery of laser oscillation increased with irradiation time. We measured the resonance spectra of the nanocavity modes during irradiation. It indicates that such a lasing interruption can be caused by wavelength shifts of the nanocavity modes and absorption losses due to the electrostatic charges on the nanocavity surface. These results are useful for the sensing of electrostatic charges.
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Satoshi Yasuda, Yuki Takahashi, Takashi Asano, Susumu Noda, and Yasushi Takahashi "Electrostatic charge sensing using nanocavity-based Raman silicon laser", Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV, 117060Q (5 March 2021); https://doi.org/10.1117/12.2577487
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KEYWORDS
Raman spectroscopy
Semiconductor lasers
Silicon
Laser development
Laser resonators
Resonators
Laser applications
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