Radiation-Induced Attenuation In Integrated Optical Materials

B. D. Evans

doi:10.1117/12.963344

5 January 1990 Radiation-Induced Attenuation In Integrated Optical Materials

B. D. Evans

Proceedings Volume 1177, Integrated Optics and Optoelectronics; (1990) https://doi.org/10.1117/12.963344
Event: OE/FIBERS '89, 1989, Boston, United States

Abstract

Three materials commonly employed in opto-electronic intregrated circuits were evaluated for radiation-induced optical attenuation in the range 300 nm to 3000 nm. These include optically clear epoxy and crystalline lithium niobate after Co-60 exposure and crystalline tellurium dioxide after mixed gamma/fast-neutron exposure. In all these materials, however, induced loss was restricted to shorter wavelengths; attenuation induced at the telecommnications windows near 850, 1300 and 1550 nm was <0.1 dB/cm.

Citation Download Citation

B. D. Evans "Radiation-Induced Attenuation In Integrated Optical Materials", Proc. SPIE 1177, Integrated Optics and Optoelectronics, (5 January 1990); https://doi.org/10.1117/12.963344

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