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Weibo Gao andMu Zhao
"Single emitter creation of nitrogen vacancy centers in 4H silicon carbide", Proc. SPIE 11806, Quantum Nanophotonic Materials, Devices, and Systems 2021, 118060C (1 August 2021); https://doi.org/10.1117/12.2597197
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Weibo Gao, Mu Zhao, "Single emitter creation of nitrogen vacancy centers in 4H silicon carbide," Proc. SPIE 11806, Quantum Nanophotonic Materials, Devices, and Systems 2021, 118060C (1 August 2021); https://doi.org/10.1117/12.2597197