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Ga2O3 has recently emerged as an attractive ultrawide bandgap material for a wide range of extreme-condition sensing applications. Besides its excellent performance as a semiconductor radiation detector material, Ga2O3 also exhibits great potential as a scintillator. Its scintillation performance can be tuned through appropriate growth control and well-designed doping. In this presentation, we will report on the temperature-dependent scintillation performance of Ga2O3 with a focus on its high scintillation yield and fast decay time. These characterization results will be correlated to Ga2O3’s intrinsic properties and material processing conditions.
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Ge Yang, Jacob Blevins, Ralph B. James, "Development of Ga2O3 materials for enabling nuclear radiation detection," Proc. SPIE 11838, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII, 1183811 (1 August 2021); https://doi.org/10.1117/12.2596453