Research on on-resistance of 4H-SiC photoconductive switch

Jiyang Shang; Yu Zhang; Haiyang Ding; Peng Luo; Minjia Lin; Chongbin Yao

doi:10.1117/12.2602755

15 October 2021 Research on on-resistance of 4H-SiC photoconductive switch

Jiyang Shang, Yu Zhang, Haiyang Ding, Peng Luo, Minjia Lin, Chongbin Yao

Proceedings Volume 11894, Optoelectronic Devices and Integration X; 118941A (2021) https://doi.org/10.1117/12.2602755
Event: SPIE/COS Photonics Asia, 2021, Nantong, JS, China

Conference Poster

Abstract

A complementary coplanar interdigital electrode photoconductive switch based on vanadium-nitrogen doped 4H-SiC bulk material was developed. The test results show that the combination of vanadium doping and coplanar interdigital electrode structure, the voltage capability of 4H-SiC photoconductive switch is significantly improved and the conductive resistance of 4H-SiC photoconductive switch under low light intensity is reduced. The bias voltage of 4H-SiC photoconductive switch is 10kV. The conductive resistance of 4H-SiC photoconductive switch excited by 0.4mJ 532nm laser is 50Ω. In a 50 Ω microwave system, the peak power output by the load is 0.5MW. By continuously increasing the injected laser energy to 2mj, the on resistance can be reduced to 6 Ω. The results show that the developed vanadium-nitrogen doped 4H-SiC photoconductive switch has the characteristics of stable output waveform, small jitter and high power. The developed vanadium-nitrogen doped 4H-SiC photoconductive switch has certain application value.

Citation Download Citation

Jiyang Shang, Yu Zhang, Haiyang Ding, Peng Luo, Minjia Lin, and Chongbin Yao "Research on on-resistance of 4H-SiC photoconductive switch", Proc. SPIE 11894, Optoelectronic Devices and Integration X, 118941A (15 October 2021); https://doi.org/10.1117/12.2602755

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