Presentation + Paper
4 March 2022 The effect of AuSn preform thickness on thermal transfer in semiconductor laser technologies
Jenny Gallery, Samuel Lytwynec
Author Affiliations +
Proceedings Volume 11983, High-Power Diode Laser Technology XX; 119830K (2022) https://doi.org/10.1117/12.2610113
Event: SPIE LASE, 2022, San Francisco, California, United States
Abstract
For the plethora of applications that require a high-melting die-attach solder, 80Au20Sn is a great choice to ensure good performance and reliability, especially when used in one of its most highly demanded applications: semiconductor laser die-attach. However, difficulty managing thermal heat transfer has prevented the widespread use of semiconductor lasers. When the operational heat of these devices increases, their longevity and potential become limited. One option to improve thermal transfer is the use a thinner 80Au20Sn preform in the bondline, which allows the heat to transfer to the heat sink more quickly and efficiently. The creation of voiding hot spots – due to the lack of solder volume – is a perceived concern when using a thinner preform in the solder joint, which then contradicts the original intention. Voiding percentages were defined for several 80Au20Sn preform thicknesses – ranging from 0.002” to 0.00035” thick – allowing for conclusions to be drawn on the effect of 80Au20Sn preform thickness on thermal transfer in semiconductor laser technologies.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jenny Gallery and Samuel Lytwynec "The effect of AuSn preform thickness on thermal transfer in semiconductor laser technologies", Proc. SPIE 11983, High-Power Diode Laser Technology XX, 119830K (4 March 2022); https://doi.org/10.1117/12.2610113
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KEYWORDS
Semiconductor lasers

Laser applications

X-ray imaging

X-rays

Gold

Reliability

Thermal effects

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