Presentation + Paper
5 March 2022 UV-written silicon nitride integrated optical phased arrays
Author Affiliations +
Abstract
Silicon nitride (SiNx), has been widely regarded as a CMOS photonics enabling material, facilitating the development of low-cost CMOS compatible waveguides and related photonic components. We have previously developed an NH3-free SiN PECVD platform in which its optical properties can be tailored. Here, we report on a new type of surface-emitting nitrogen-rich silicon nitride waveguide with antenna lengths of L < 5 mm. This is achieved by using a technique called small spot direct ultraviolet writing, capable of creating periodic refractive index changes ranging from -0.01 to -0.04. With this arrangement, a weak antenna radiation strength can be achieved, resulting in far-field beam widths < 0.0150, while maintaining a minimum feature size equal to 300 nm, which is compatible with DUV scanner lithography.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. T. Ilie, G. De Paoli, A. Flint, T. Dominguez Bucio, P. Ginel-Moreno, J. Sagar, A. Ortega-Monux, K. Lekkas, T. Rutirawut, L. Mastronardi, I. Skandalos, I. Molina Fernandez, G. T. Kanellos, P. Cheben, P. G. R. Smith, J. C. Gates, and F. Y. Gardes "UV-written silicon nitride integrated optical phased arrays", Proc. SPIE 12005, Smart Photonic and Optoelectronic Integrated Circuits 2022, 1200504 (5 March 2022); https://doi.org/10.1117/12.2608824
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KEYWORDS
Antennas

Waveguides

Silicon

Refractive index

Ultraviolet radiation

Optical design

Chemical elements

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