Presentation + Paper
5 March 2022 Effects of Gadolinium precursors on the magnetic properties of Gadolinium-doped Gallium Nitride for spintronic applications
Author Affiliations +
Abstract
The role of metal-organic precursors specifically gadolinium precursors on the resulting magnetic properties of gadolinium-doped gallium nitride (GaGdN) is investigated. Gadolinium-doping is expected to render spin-related magnetic properties in GaN for spintronic applications. To achieve and understand this, GaGdN was grown using metalorganic chemical vapor deposition using two types of gadolinium precursors - tris (2,2,6,6-tetramethyl-3,5- heptanedionate) gadolinium ((TMHD)3Gd) and tris(cyclopentadienyl) gadolinium (Cp3Gd). GaGdN grown using (TMHD)3Gd showed Anomalous Hall Effect and ferromagnetism at room temperature (RT). GaGdN grown using Cp3Gd showed ordinary Hall Effect with no signs of ferromagnetism or any spin polarization. Oxygen from (TMHD)3Gd incorporated in GaGdN during the MOCVD growth could be responsible for the differences in magnetic properties. GaGdN shows properties at RT that are conducive for spintronic applications. However, metal-organic precursors and corresponding presence of oxygen significantly influence the spin-related capabilities of GaGdN. This work contributes towards understanding the mechanisms for spin-related properties of GaGdN that can enable its RT spintronic applications.
Conference Presentation
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Vishal Saravade, Austin Crawford, Jahne Williams, Chuanle Zhou, Na Lu, Benjamin Klein, and Ian Ferguson "Effects of Gadolinium precursors on the magnetic properties of Gadolinium-doped Gallium Nitride for spintronic applications", Proc. SPIE 12009, Quantum Sensing and Nano Electronics and Photonics XVIII, 120090A (5 March 2022); https://doi.org/10.1117/12.2607401
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KEYWORDS
Gadolinium

Magnetism

Spintronics

Gallium nitride

Metalorganic chemical vapor deposition

Doping

Quantum information

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