Poster + Presentation + Paper
25 May 2022 Selective contaminant removal in EUV photoresists using a tailored functionality filter
Tetsu Kohyama, Jad Jaber
Author Affiliations +
Conference Poster
Abstract
Defect source reduction in Extreme Ultraviolet (EUV) photoresists is a critical requirement to improve device performance and overall yield for a seamless transition to high volume manufacturing, especially for technologies in the 3 nm node and beyond. This is particularly true considering the increased influence of stochastic imaging defectivity in EUV relative to prior lithographic technologies. Filtration is one of the key enabling technologies to maintain a material’s purity and therefore enhance process performance, beginning when the photoresist is manufactured, and continuing until the photoresist is dispensed on a wafer. We have previously presented a novel filtration technology development to maximize filtration efficiency for specific contamination sources and reduce defectivity in EUV photoresists. In this paper, further results and possible defect reduction mechanisms will be updated and discussed to address stochastic issues, specially variability of polymer molecular weight distribution in EUV CAR (Chemically Amplified Resists) photoresists.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tetsu Kohyama and Jad Jaber "Selective contaminant removal in EUV photoresists using a tailored functionality filter", Proc. SPIE 12055, Advances in Patterning Materials and Processes XXXIX, 120550Q (25 May 2022); https://doi.org/10.1117/12.2613987
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KEYWORDS
Photoresist materials

Polymers

Extreme ultraviolet lithography

Stochastic processes

Extreme ultraviolet

Optical lithography

Semiconducting wafers

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