Paper
1 November 2021 GaSb-based narrow ridge waveguide laser diode with single transverse mode operation
Author Affiliations +
Proceedings Volume 12057, Twelfth International Conference on Information Optics and Photonics; 1205709 (2021) https://doi.org/10.1117/12.2603925
Event: Twelfth International Conference on Information Optics and Photonics, 2021, Xi'an, China
Abstract
We have fabricated and characterized a narrow ridge waveguide InGaSb/AlGaAsSb type-I separate-confinementheterostructure (SCH) multi-quantum-well (MQW) laser diode emitting near 2.0μm. The broadened vertical waveguide laser structure is grown by the solid-state molecular beam epitaxy. The 4.5μm lateral ridge waveguide results in a single transverse mode operation of the laser with an injunction current below 200mA at a heat sink temperature of 293K. This laser diode provides a room temperature continuous-wave output power of 40mW at a driving current of 200mA with a 1mm cavity length and 97/5% high-reflection/anti-reflection coatings, mounted epi-side down. The far-field beam intensity distribution on the fast and slow axis of the laser diode demonstrates a TE00 fundamental transverse mode laser beam with the fast and slow axis beam divergence of 58°*23° full width at half maximum (FWHM). The diode lasers operating on fundamental spatial mode are efficiently coupling into optical fibers or collimating for free-space applications. The midinfrared region single transverse mode GaSb-based laser is hence an ideal light source for spectroscopic sensing and diodepumping pumping fiber amplifiers and solid-state lasers systems.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tian-fang Wang, Cheng-ao Yang, Yi-hang Chen, Yi Zhang, Jin-ming Shang, Yu Zhang, Ying-qiang Xu, and Zhi-chuan Niu "GaSb-based narrow ridge waveguide laser diode with single transverse mode operation", Proc. SPIE 12057, Twelfth International Conference on Information Optics and Photonics, 1205709 (1 November 2021); https://doi.org/10.1117/12.2603925
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KEYWORDS
Semiconductor lasers

Waveguides

Collimation

Continuous wave operation

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