Silicon surface kinetics studied using laser-induced thermal desorption

Steven M. George; Pawan Gupta; Birgit G. Koehler; Peter A. Coon; A. C. Dillon; C. H. Mak

doi:10.1117/12.17871

1 July 1990 Silicon surface kinetics studied using laser-induced thermal desorption

Steven M. George, Pawan Gupta, Birgit G. Koehler, Peter A. Coon, A. C. Dillon, C. H. Mak

Proceedings Volume 1208, Laser Photoionization and Desorption Surface Analysis Techniques; (1990) https://doi.org/10.1117/12.17871
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

Laser induced thermal desorption (LITD) has emerged as a powerful time-dependent probe of surface processes. The ability of LITD to desorb silicon-containing species from Si(l1l)7x7 has been employed to study the decomposition of H₂0 and NH₃ on Si(l11)7x7. These LITD studies on Si(111)7x7 assumed that the silicon-containing species were derived from surface reaction intermediates. This assumption was recently tested by transmission FTIR investigations of H20 and NH₃ decomposition on high surface area porous silicon surfaces. The LITD and FTIR results were compared for the thermal stability of the SiOH surface species during H₂O decomposition and the SiNH₂ surface species during NH₃ decomposition. The good agreement between the LITD and the FTIR investigations indicated that the silicon containing LITD species correspond to silicon surface reaction intermediates.

Citation Download Citation

Steven M. George, Pawan Gupta, Birgit G. Koehler, Peter A. Coon, A. C. Dillon, and C. H. Mak "Silicon surface kinetics studied using laser-induced thermal desorption", Proc. SPIE 1208, Laser Photoionization and Desorption Surface Analysis Techniques, (1 July 1990); https://doi.org/10.1117/12.17871

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