Stress-released Si3N4 microresonator fabrication process for optical frequency comb

Liangsen Feng; Wei Li; Yudong Li; Shaowu Chen

doi:10.1117/12.2625861

27 March 2022 Stress-released Si₃N₄ microresonator fabrication process for optical frequency comb

Liangsen Feng, Wei Li, Yudong Li, Shaowu Chen

Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 12169AA (2022) https://doi.org/10.1117/12.2625861
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China

Abstract

Si₃N₄ microresonator have been recently widely used in various applications. Key factor of OFC generation is high Qfactor microresonator device and the precisely dispersion control of waveguides. In this paper, low-propagation-loss structure with precisely engineered dispersion properties has been illustrated to realize microresonator-based optical frequency combs operating in the dissipative Kerr soliton regime. We designed a ring with 100 GHz free spectrum range (FSR) with the size of the chip about 5 mm×5 mm. The improvement included that we adopted high temperature annealing to reduce absorption loss, we used metal as hard mask layer before ICP etching of the Si₃N₄ layer and we etched the Si₃N₄ layer after deposition of the SiO₂ layer to expose the waveguide section. The high Q-factor device need low optical pump power, such as on-chip diode laser and thus realized integrated on-chip microresonator optical frequency comb which was compatible with CMOS and be successfully used in chip-based optical clock and other applications.

Citation Download Citation

Liangsen Feng, Wei Li, Yudong Li, and Shaowu Chen "Stress-released Si₃N₄ microresonator fabrication process for optical frequency comb", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 12169AA (27 March 2022); https://doi.org/10.1117/12.2625861

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