Presentation
3 October 2022 Operation mechanisms of prototypical quantum dot light-emitting diodes (Conference Presentation)
Author Affiliations +
Abstract
Efficiency limiting factors of quantum dots light-emitting diodes (QLEDs) are studied by a machine learning approach using features taken from published data. Prototypical structure of Cd-based QLEDs is transparent conductive oxide (TCO)/hole transport layer (HTL)/quantum dots (QDs)/electron transport layer (ETL)/Al, fabricated by printing processes. The most important factor is the hole injection barrier from HTL to QD layer (about 1 eV in CdSe QLEDs). A mechanism of the hole injection in such QLEDs is discussed using device simulation, and the experimental results that support the mechanism are shown. In addition, other efficiency limiting factors - the electron mobility of HTL and carrier balance in QD layer - are experimentally shown.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroyoshi Naito "Operation mechanisms of prototypical quantum dot light-emitting diodes (Conference Presentation)", Proc. SPIE 12208, Organic and Hybrid Light Emitting Materials and Devices XXVI, 1220806 (3 October 2022); https://doi.org/10.1117/12.2637341
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KEYWORDS
Light emitting diodes

Quantum dots

Electrons

Machine learning

Organic light emitting diodes

Device simulation

Oxides

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