Chemically produced XeF(B) electronic excited state

Robert D. Bower; Tientsai T. Yang

doi:10.1117/12.18482

1 June 1990 Chemically produced XeF(B) electronic excited state

Robert D. Bower, Tientsai T. Yang

Proceedings Volume 1225, High-Power Gas Lasers; (1990) https://doi.org/10.1117/12.18482
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

XeF(B) has been observed in the reaction of SiH₄ + ₂ + XeF₂. dependence of XeF(B) emission intensity on [XeF₂], [F₂], [SiH₄] and [Ar] has been measured. Possible mechanisims of XeF(B) production is discussed.

Citation Download Citation

Robert D. Bower and Tientsai T. Yang "Chemically produced XeF(B) electronic excited state", Proc. SPIE 1225, High-Power Gas Lasers, (1 June 1990); https://doi.org/10.1117/12.18482

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