Paper
15 September 2022 Multi-beam mask writer MBM-2000PLUS
Author Affiliations +
Abstract
MBM-2000, the latest multi-beam mask writer of Nuflare Technology, Inc. (NFT), have achieved reasonable writing time in mask fabrication of 3nm semiconductor technology node, which demand small curvilinear patterns in EUV masks and curvilinear OPC patterns in optical masks. For less line edge roughness and better pattern fidelity, however, the demand of lower dose sensitivity resists keeps increasing. In such a situation, the beam exposure time can be the main bottleneck of the writing time. In order to meet the demand, NFT has developed MBM-2000PLUS, which achieved high beam current density of beamlets ×1.3 larger than MBM-2000. As the result, the writing time became constant up to 170 μC/cm2 exposure dose condition without confinement by beam exposure time. Even at the region of exposure dose confinement, the writing time became 20% less than MBM-2000 at 200 μC/cm2 dose condition. In addition, charge effect reduction (CER), which is an electron optics system reducing resist charge effect, has been upgraded from MBM-2000 for improving image placement accuracy. Furthermore, MBM-2000PLUS inherits pixel level dose correction (PLDC) function from MBM-2000 as the solution for less edge placement error and better pattern fidelity. In this paper, those features of MBM- 2000PLUS are highlighted including improvement of pattern fidelity by PLDC function. In order to verify PLDC, a new methodology of quantitative evaluation of pattern fidelity using sine-shape pattern is introduced.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haruyuki Nomura, Hiroshi Matsumoto, Keisuke Yamaguchi, Hayato Kimura, Satoshi Nakahashi, and Noriaki Nakayamada "Multi-beam mask writer MBM-2000PLUS", Proc. SPIE 12325, Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 123250O (15 September 2022); https://doi.org/10.1117/12.2641338
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KEYWORDS
Photomasks

Line edge roughness

Mask making

Convolution

Data conversion

Metrology

Data processing

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