A SOI-based SiGe heterojunction phototransistor detector with enhanced light absorption capacity

Ruilang Ji; Hongyun Xie; Liang Chen; Xiaoting Shen; Xiaoxiong Yang; Dong Han; Weicong Na; Dongyue Jin; Wanrong Zhang

doi:10.1117/12.2644185

9 September 2022 A SOI-based SiGe heterojunction phototransistor detector with enhanced light absorption capacity

Ruilang Ji, Hongyun Xie, Liang Chen, Xiaoting Shen, Xiaoxiong Yang, Dong Han, Weicong Na, Dongyue Jin, Wanrong Zhang

Proceedings Volume 12328, Second International Conference on Optics and Image Processing (ICOIP 2022); 123280E (2022) https://doi.org/10.1117/12.2644185
Event: Second International Conference on Optics and Image Processing (ICOIP 2022), 2022, Taian, China

Abstract

High speed and high efficiency photodetectors are the key components in optical transmission, optical sensing and optical processing systems. Except performance requirements, cost control is also an aspect that must be considered in the current technological development. Therefore, silicon-based high-speed and high-efficiency chip level photodetectors that can be monolithic integrated with very large-scale CMOS integrated circuits have become the focus of research. SOI structure provides performance improvement for silicon-based HPT. We demonstrate a SOI-based SiGe Heterojunction Phototransistor which has greater light absorption compared with Si-based HPT. The influence of SOI structure on absorption and collector current of SiGe heterojunction phototransistor (HPT) are simulated and analyzed in this paper. When the optical power is 10mw, the collector current in SOI-based HPT reported in this paper can reach 4.6mA with 5.83% of light absorption calculated, while the collector current in Si-based HPT is 3.35mA with 4.48% of light absorption calculated under 940nm wavelength. The peak responsivity with SOI structure exhibits 2.82A/W which is enhanced by 12.8% than that of Si-based HPT.

Citation Download Citation

Ruilang Ji, Hongyun Xie, Liang Chen, Xiaoting Shen, Xiaoxiong Yang, Dong Han, Weicong Na, Dongyue Jin, and Wanrong Zhang "A SOI-based SiGe heterojunction phototransistor detector with enhanced light absorption capacity", Proc. SPIE 12328, Second International Conference on Optics and Image Processing (ICOIP 2022), 123280E (9 September 2022); https://doi.org/10.1117/12.2644185

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Absorption

Silicon

Phototransistors

Heterojunctions

Sensors

Photodetectors

Active optics

Show All Keywords

Keywords/Phrases

Search In:

Publication Years