In this study, we present evaluation results of the 905nm pulse laser diode that has power of over 140W adopting 4stack epitaxy structure with 200um×15um emitter size for autonomous vehicle lidar and other lidar applications. The 4stack epitaxy structure was composed of AlGaAs/InGaAs composition and tunnel junction with GaAs and grown by MOCVD. As a results of the characteristic evaluation, 905nm pulse laser diode with 4stack epitaxy obtained an output of about 149.6W under the conditions of 1KHz cycle, 0.01% duty, and 40A input current. Also developed 905nm pulse laser diode achieved an operating voltage of 13V, a horizontal angle of 9.3°, a vertical angle of 29.1°, and peak wavelength of 905.2nm with TO-56 package respectively.
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