Poster + Paper
16 March 2023 Predicting the response of lead selenide thin film photoconductor in circuits with a series load resistor
Jasmine J. Mah, Khalifa M. Azizur-Rahman, Baolai Liang, Diana L. Huffaker, Jeung Hun Park, Stewart Miller, Richard S. Kim, Russell Dahl
Author Affiliations +
Proceedings Volume 12422, Oxide-based Materials and Devices XIV; 124220T (2023) https://doi.org/10.1117/12.2650998
Event: SPIE OPTO, 2023, San Francisco, California, United States
Conference Poster
Abstract
We compared spectral response of a PbSe thin film photoconductor using FTIR with either a current or voltage preamplifier from 77K to 340K. The voltage preamplifier had a series load resistor; the current preamplifier did not. A photoconductor’s resistance changes with incident light, thus its measured response in terms of amps or volts per watt of incident light depends on the preamplifier circuit configuration. However, commercial descriptions of spectral response often only present data for a single circuit configuration. This leads to different “apparent” spectral response curves for different circuits with the same device. We investigated how accurately we could predict the response trend of a voltage preamplifier circuit or a current preamplifier circuit using dark resistance (Rdark) and light resistance (Rlight) measurements. We were able to predict the temperature at which maximum response occurs within ~25K, suggesting that this approach can be useful to predict the response of a PbSe photoconductor in various circuits with a limited set of measurements.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jasmine J. Mah, Khalifa M. Azizur-Rahman, Baolai Liang, Diana L. Huffaker, Jeung Hun Park, Stewart Miller, Richard S. Kim, and Russell Dahl "Predicting the response of lead selenide thin film photoconductor in circuits with a series load resistor", Proc. SPIE 12422, Oxide-based Materials and Devices XIV, 124220T (16 March 2023); https://doi.org/10.1117/12.2650998
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KEYWORDS
Spectral response

Photoresistors

Resistance

Resistors

Amplifiers

Temperature metrology

Diodes

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