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We fabricated a Short Resonant-Cavity Light Emitting Diodes (SRC-LEDs) with emission wavelength at 3.4 µm using a metal ground plane positioned quarter-wavelength from the active region and the total semiconductor optical cavity thickness of five quarter-wavelengths. Devices were fabricated using wafer bonding and substrate removal process. Experimental testing in continuous wave operation at room temperature demonstrates six times enhancement of the optical power output of short resonant-cavity LEDs compared to a reference conventional “bulk” LEDs with an identical active region and optical radiation extraction through a thinned-down doped substrate.
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Andrea Simaz, Mina Beshara, Gerhard Böhm, Anna Kröninger, Mikhail A. Belkin, "Mid-infrared resonant-cavity GaSb light emitting diodes with a metal back plane," Proc. SPIE 12441, Light-Emitting Devices, Materials, and Applications XXVII, 124410H (14 March 2023); https://doi.org/10.1117/12.2648251