Development progress of key components for LPP-EUV light sources

Hiroaki Tomuro; Yoshifumi Ueno; Shinji Nagai; Fumio Iwamoto; Kenichi Miyao; Hideyuki Hayashi; Takuya Ishii; Tamotsu Abe; Hiroaki Nakarai; Takashi Saitou; Hakaru Mizoguchi

doi:10.1117/12.2657640

28 April 2023 Development progress of key components for LPP-EUV light sources

Hiroaki Tomuro, Yoshifumi Ueno, Shinji Nagai, Fumio Iwamoto, Kenichi Miyao, Hideyuki Hayashi, Takuya Ishii, Tamotsu Abe, Hiroaki Nakarai, Takashi Saitou, Hakaru Mizoguchi

Author Affiliations +

Proceedings Volume 12494, Optical and EUV Nanolithography XXXVI; 1249411 (2023) https://doi.org/10.1117/12.2657640
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Conference Poster

Abstract

We report the development progress of key technologies for the Sn-LPP (Laser-produced-plasma) EUV light source system at Gigaphoton Inc. EUV light source systems have come to be used for a wide range of applications such as lithography exposure tools and inspection tools. In both applications, high power and high radiance together with high operation availability are required. To meet these requirements, we developed and optimized a long lifetime droplet generator, a pre-pulse irradiation scheme, laser-droplet shooting control and debris mitigation with hydrogen gas for lifetime extension of the EUV collector mirror. To achieve high operation availability, the collector mirror and the Sn droplet generator lifetime are the most important contributions. The collector mirror lifetime is mainly determined by the reflectivity degradation due to sputtering, implantation, and deposition by Sn ions, Sn atoms, Sn fragments, and hydrogen-induced blisters. The developed droplet generator with in-line Sn fuel feed system has demonstrated stable droplet generation for more than 1,300 hours in our EUV light source. An advanced pre-pulse technology achieved higher CE without increasing the energy of the Sn plasma. Our Sn mitigation scheme works efficiently for lower energy ions and lower fragment deposition rates. Our optimized in-situ shooting control system improved the EUV energy and dose error. With these technologies, we have demonstrated no reflectivity degradation (i.e. no fragment deposition) on EUV sample mirrors after 25 Billion pulse irradiation tests. The advanced capping layer has demonstrated to suppress blister formation.

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Hiroaki Tomuro, Yoshifumi Ueno, Shinji Nagai, Fumio Iwamoto, Kenichi Miyao, Hideyuki Hayashi, Takuya Ishii, Tamotsu Abe, Hiroaki Nakarai, Takashi Saitou, and Hakaru Mizoguchi "Development progress of key components for LPP-EUV light sources", Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 1249411 (28 April 2023); https://doi.org/10.1117/12.2657640

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