Presentation + Paper
27 April 2023 Alignment and overlay through opaque metal layers
Author Affiliations +
Abstract
In this paper we have evaluated alignment and overlay for a Ruthenium Direct Metal Etch process. Depending on the integration strategy, line resistance and lithography requirements, a process with no remaining topography may be preferred from a lithography point of view, but due to the Ruthenium light absorption alignment and overlay through a thick Ruthenium layer will be challenging. In this paper we have studied the maximum thickness of Ruthenium for which the alignment sensor can still detect the alignment marks below and quantify the quality of diffraction-based overlay on an ASML YieldStar overlay metrology tool.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. M. Blanco Carballo, E. Canga, C. Jehoul, A. Moussa, A. H. Tamaddon, C. Tabery, G. Gunjala, B. Menchtchikov, V. G. Zacca, S. Lalbahadoersing, A. den Boef, and R. Synowicki "Alignment and overlay through opaque metal layers", Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 124960I (27 April 2023); https://doi.org/10.1117/12.2658084
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KEYWORDS
Ruthenium

Optical alignment

Semiconducting wafers

Overlay metrology

Oxides

Silicon

Metals

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