Poster + Paper
27 April 2023 Deep learning for the analysis of x-ray scattering data from high aspect ratio structures
Andrei Baranovskiy, Inbar Grinberg, Michael G. Greene, Yehonatan Amasay, Matthew Wormington
Author Affiliations +
Conference Poster
Abstract
In recent years, Deep Learning (DL) algorithms employing artificial neural networks (NN) have been shown to be a powerful tool for the classification and quantification of images including intensity data from various x-ray scattering techniques. These algorithms generally require massive, labeled datasets for training and validating the NNs. Such datasets can be extremely difficult to obtain from measurements for several reasons. The size of the dataset is limited by the variation in available samples and the time available to measure the samples. The labels are limited by both the number and quality of available reference measurements. In this work we will discuss the use of DL for the analysis of critical dimension small angle x-ray scattering (CD-SAXS) data from high-aspect ratio (HAR) structures encountered in 3D NAND and DRAM memories. We have developed a novel solution for the automatic generation and labeling of large synthetic datasets using “realistic simulations” of the x-ray scattering data. Our solution includes instrumental artifacts such as background scattering and Poisson noise normally found in real x-ray images. Additionally, we have included structural variations based on parameters obtained from limited reference data, e.g., cross-section SEM images, which are critical to prevent overfitting of the DL model and improve the accuracy of the analysis. The realistic simulations are generated automatically using the NanoDiffract for XCD (NDX) software. The synthetic data are then used to train a convolutional neural network (CNN) that can be deployed and used for real-time inference. We demonstrate this approach by evaluating single-shot alignment and tilt of HAR memory hole structures. The CNN was validated with experimental data collected and analyzed using a Sirius-XCD® tool. Validation with reference data from production quality wafers resulted in an R2 > 0.95 and precision 3σ < 0.02 degree with a significant reduction in measurement time per site.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrei Baranovskiy, Inbar Grinberg, Michael G. Greene, Yehonatan Amasay, and Matthew Wormington "Deep learning for the analysis of x-ray scattering data from high aspect ratio structures", Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 1249637 (27 April 2023); https://doi.org/10.1117/12.2658475
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KEYWORDS
Semiconducting wafers

Scattering

X-rays

Data modeling

Deep learning

Metrology

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