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30 April 2023 MOx resist formulation, chemistry, and processing impacts on the power spectral density of line-edge roughness
Amrit K. Narasimhan, Chris A. Mack, Peter De Schepper, Kai Jiang, Michael Kocsis, Jason K. Stowers, Kazuki Kasahara
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Proceedings Volume 12498, Advances in Patterning Materials and Processes XL; 124980Y (2023) https://doi.org/10.1117/12.2658494
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States
Abstract
Metal oxide (MOx) photoresists have matured into a leading platform for advanced-node EUV Lithography, particularly for tight pitches and High-NA applications. To meet the requirements for High-NA, there must be simultaneous improvements in resist design, processing, and metrology. Here, we evaluate new resist and process modifications through detailed roughness analysis. Specifically, we evaluate the impact of resist formulation improvements and different development processes that take advantage of the MOx platform, and the performance of MOx resists at different film thicknesses. Additionally, we investigate the impact of etch and discuss strategies for metrology improvement as the industry prepares for High-NA.
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Amrit K. Narasimhan, Chris A. Mack, Peter De Schepper, Kai Jiang, Michael Kocsis, Jason K. Stowers, and Kazuki Kasahara "MOx resist formulation, chemistry, and processing impacts on the power spectral density of line-edge roughness", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 124980Y (30 April 2023); https://doi.org/10.1117/12.2658494
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KEYWORDS
Photoresist processing
Chemistry
Photoresist materials
Yield improvement
Etching
Metrology
Lithography
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