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23 January 2023 Rapid and facile characterization of dislocations in cross-sectional GaAs/Si films using electron channeling contrast imaging
Chen Jiang, Hao Liu, Jian Li, Yidong Zhang, Chuanchuan Li, Jun Wang, Qi Wang, Xin Wei, Xiaomin Ren
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Proceedings Volume 12556, AOPC 2022: Optoelectronics and Nanophotonics; 125561G (2023) https://doi.org/10.1117/12.2647200
Event: Applied Optics and Photonics China 2022 (AOPC2022), 2022, Beijing, China
Abstract
Electron channeling contrast imaging (ECCI), as a rapid and convenient technique, has been widely used to characterize dislocations of heteroepitaxial III-V materials in recent years. The previous ECCI measurements, however, were primarily based on plan-view ones. In this work, we demonstrate an experimental observation of the cross sectional ECCI measurement on a Si-based GaAs sample for the first time. The plan view ECCI image can provide information on threading dislocations, stacking faults, as well as the dislocation distribution. By investigating the relationship between the defect contrast and the corresponding accelerating voltage, the optimal range of beam voltages for cross-sectional ECCI measurement is 10 kV-15 kV. The cross-sectional ECCI can simplify the process of characterizing dislocations in Si-based III-V materials.
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Chen Jiang, Hao Liu, Jian Li, Yidong Zhang, Chuanchuan Li, Jun Wang, Qi Wang, Xin Wei, and Xiaomin Ren "Rapid and facile characterization of dislocations in cross-sectional GaAs/Si films using electron channeling contrast imaging", Proc. SPIE 12556, AOPC 2022: Optoelectronics and Nanophotonics, 125561G (23 January 2023); https://doi.org/10.1117/12.2647200
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KEYWORDS
Gallium arsenide
Transmission electron microscopy
Silicon
Scanning electron microscopy
Crystals
Heteroepitaxy
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