A 20-dBm W-band power amplifier in 130 nm SiGe BiCMOS technology

Tao Peng; Kai Kang; Jia Cao; Pengwei Chen

doi:10.1117/12.2671481

29 March 2023 A 20-dBm W-band power amplifier in 130 nm SiGe BiCMOS technology

Tao Peng, Kai Kang, Jia Cao, Pengwei Chen

Proceedings Volume 12594, Second International Conference on Electronic Information Engineering and Computer Communication (EIECC 2022); 125940K (2023) https://doi.org/10.1117/12.2671481
Event: Second International Conference on Electronic Information Engineering and Computer Communication (EIECC 2022), 2022, Xi'an, China

Abstract

This paper presents a common emitter (CE) four-way combined W-band power amplifier in 0.13μm SiGe BiCMOS process. The PA is designed with four-stage CE structure and λ/4 impedance transformation networks for power combining. The four-way amplifier has a peak small signal gain of 22.6 dB at 92.6 GHz. The 3 dB bandwidth is 15GHz ranging from 83.2-98.2GHz. The PA has saturation output power (Psat) of 20-20.8 dBm at 90-98 GHz and power-added efficiency (PAE) of 7.8-11.6% and output referred 1dB compression point (OP1dB) of 18.2-19 dBm at 90-98 GHz.

Citation Download Citation

Tao Peng, Kai Kang, Jia Cao, and Pengwei Chen "A 20-dBm W-band power amplifier in 130 nm SiGe BiCMOS technology", Proc. SPIE 12594, Second International Conference on Electronic Information Engineering and Computer Communication (EIECC 2022), 125940K (29 March 2023); https://doi.org/10.1117/12.2671481

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