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9 March 2023 Effect of growth temperature of Si buffer layer on the morphology of Ge quantum dots on Si
Qijiang Shu, Lei Chen, Linjing Yang
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Proceedings Volume 12600, International Conference on Optoelectronic Materials and Devices (ICOMD 2022); 126000G (2023) https://doi.org/10.1117/12.2674042
Event: 2022 International Conference on Optoelectronic Materials and Devices, 2022, Chongqing, China
Abstract
The highly dependence of the many special properties of Si-based Ge quantum dots (Ge/Si QDs) on their morphology and structure made the controllable growth of QDs a research hotspot. In this paper, we explored the process of regulating the growth of Ge QDs by affecting the morphology and structure of the Si buffer layer at different growth temperatures by using magnetron sputtering equipment, atomic force microscopy (AFM) and Raman spectroscopy. The results showed that the increase of temperature can effectively improve the crystallization rate and surface smoothness of the Si buffer layer, and then increase driving force and region of forming nano islands. The density and size of the QDs rose significantly. The specific evolution mechanism of the QDs was discussed by establishing a basic model and combining the thermodynamics and dynamics theory of atomic migration. Our work discussed an important influence factor for the controllable growth of QDs, and laid an important foundation for manufacturing high-quality QDs used for optoelectronic devices under the joint control of multiple factors in the future.
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Qijiang Shu, Lei Chen, and Linjing Yang "Effect of growth temperature of Si buffer layer on the morphology of Ge quantum dots on Si", Proc. SPIE 12600, International Conference on Optoelectronic Materials and Devices (ICOMD 2022), 126000G (9 March 2023); https://doi.org/10.1117/12.2674042
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KEYWORDS
Silicon
Germanium
Sputter deposition
Crystallization
Raman spectroscopy
Atomic force microscopy
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