Paper
1 June 1990 Germanium-containing resist for bilayer resist process
Hirofumi Fujioka, Hiroyuki H. N. Nakajima, Shinji Kishimura, Hitoshi Nagata
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Abstract
Germanium-containing resist material has been investigated as a new type of removable bilayer resist , since the oxide of germanium is soluble in conventional acids. The polymers derived from trimethylgermyl- styrene ( GeSt) show good resistance to 02 RIE , and their surface has been •determined to be converted into GeO, by XPS measurement before and after 02 RIE. The homopolymer of GeSt has been found to crosslink upon exposure to deep UV or electron beam radiation and to behave as a negative resist. The sensitivity is enhanced several times as high as that of the PGeSt by copolymerizing with 1 0 mol% chloromethyl-styrene ( CMSt) . The copolymer gives fine resist patterns with vertical sidewalls in a bilayer process. The germanium- containing resist pattern after 02 RIE is not completely dissolved in some acids such as H2 SO4 . This is due to the organic components remaining in the film. However, it has been found that it is perfectly dissolved in oxidizing acids such as fuming HNO and H2S04/H202(2/l) without a residue.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hirofumi Fujioka, Hiroyuki H. N. Nakajima, Shinji Kishimura, and Hitoshi Nagata "Germanium-containing resist for bilayer resist process", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20108
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Cited by 3 scholarly publications.
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KEYWORDS
Reactive ion etching

Polymers

Germanium

Silicon

Deep ultraviolet

Photoresist processing

Electron beams

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