Optimization of the dry development for the DESIRE process

Ria Lombaerts; Bruno Roland; Anne-Marie Goethals; Luc Van den Hove

doi:10.1117/12.20124

1 June 1990 Optimization of the dry development for the DESIRE process

Ria Lombaerts, Bruno Roland, Anne-Marie Goethals, Luc Van den Hove

Proceedings Volume 1262, Advances in Resist Technology and Processing VII; (1990) https://doi.org/10.1117/12.20124
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

In surface imaging, dry developed resist systems, based on gas phase silylation, profiles are mainly determined by the silicon distribution between the exposed and the unexposed areas in the upper part of the resist, and by the dry etching process that transfers this silicon image into the rest of the resist layer1 . Contrast enhancement, resulting in steeper roflles and less residues, is obtained by a two-step dry development process23. In a short first step, a small amount of a fluorinated gas is added to remove the upper thin layer of resist. This results In an elimination of residual silicon in the non-exposed areas and also in steeper silicon-profiles in the exposed regions, and thus in steeper resist profiles after dry development. Similar process improvements can be obtained using a two-step dry development process using pure oxygen. The selectivity is then controlled by increasing or decreasing physical sputtering. Instead of using fluorine containing gases for non-selectivity, the silicon, incorporated Into the non-exposed areas, is sputtered away physically In a first step by using elevated power and decreased flow rate conditions. With this in mind and with the help of a statistically designed experiment, The optimum process conditions for this pure oxygen, two-step development process were determined. The results are compared to those obtained using a single step development and to the two-step C2F6 process.

Citation Download Citation

Ria Lombaerts, Bruno Roland, Anne-Marie Goethals, and Luc Van den Hove "Optimization of the dry development for the DESIRE process", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20124

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available