Highly regular nanogratings formation on amorphous semiconductors films by femtosecond laser radiation

Alexander Dostovalov; Kirill Bronnikov; Semyon Gladkikh; Evgeny Mitsai; Alexey Zhizhchenko; Aleksandr Kuchmizhak

doi:10.1117/12.2687393

27 November 2023 Highly regular nanogratings formation on amorphous semiconductors films by femtosecond laser radiation

Alexander Dostovalov, Kirill Bronnikov, Semyon Gladkikh, Evgeny Mitsai, Alexey Zhizhchenko, Aleksandr Kuchmizhak

Proceedings Volume 12762, Advanced Laser Processing and Manufacturing VII; 127620A (2023) https://doi.org/10.1117/12.2687393
Event: SPIE/COS Photonics Asia, 2023, Beijing, China

Abstract

We present the results of direct laser-induced periodic surface structuring of semiconductors thin films (a-Si, a-Ge) deposited on glass substrate at different ambient environments (air, vacuum, nitrogen) resulting in regular gratings with the period of 600 nm to 900 nm at the laser wavelength of 1026 nm oriented either along (a-Si) or transverse (a-Ge) to the linear laser polarization direction. The processing speed has a different effect on morphology of obtained structures: on a-Si film, an increase of scanning speed leads to the reorientation of gratings and reduction of their period, while on a-Ge, the uniformity degradation and increase of the period are observed. Changing the ambient atmosphere from air to nitrogen and vacuum, when writing structures on a-Ge, helps to minimize the uniformity degradation and obtain highly regular nanogratings.

Citation Download Citation

Alexander Dostovalov, Kirill Bronnikov, Semyon Gladkikh, Evgeny Mitsai, Alexey Zhizhchenko, and Aleksandr Kuchmizhak "Highly regular nanogratings formation on amorphous semiconductors films by femtosecond laser radiation", Proc. SPIE 12762, Advanced Laser Processing and Manufacturing VII, 127620A (27 November 2023); https://doi.org/10.1117/12.2687393

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