Energy relaxation of hot holes in GaAs grown on Si

Kai Shum; Yoshihiro Takiguchi; Jihad M. Mohaidat; Feng Liu; Robert R. Alfano; Hadis Morkoc

doi:10.1117/12.20716

1 August 1990 Energy relaxation of hot holes in GaAs grown on Si

Kai Shum, Yoshihiro Takiguchi, Jihad M. Mohaidat, Feng Liu, Robert R. Alfano, Hadis Morkoc

Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20716
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

I-lot hole energy relaxation dynamics are reported using time- and energy-resolved photoluminescence spectroscopy. The hole cooling rate is determined to be smaller than expected bed on hole scatterings with longitudinal optical phonons.

Citation Download Citation

Kai Shum, Yoshihiro Takiguchi, Jihad M. Mohaidat, Feng Liu, Robert R. Alfano, and Hadis Morkoc "Energy relaxation of hot holes in GaAs grown on Si", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); https://doi.org/10.1117/12.20716

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