O-H centers in β-Ga2O3 with a Ga(1) vacancy at their core

Michael Stavola; W. Beall Fowler; Amanda Portoff; Andrew Venzie; Evan R. Glaser; Stephen J. Pearton

doi:10.1117/12.3009619

15 March 2024 O-H centers in β-Ga₂O₃ with a Ga(1) vacancy at their core

Michael Stavola, W. Beall Fowler, Amanda Portoff, Andrew Venzie, Evan R. Glaser, Stephen J. Pearton

Proceedings Volume 12887, Oxide-based Materials and Devices XV; 1288708 (2024) https://doi.org/10.1117/12.3009619
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

β-Ga₂O₃ is an ultrawide bandgap semiconductor that shows promise for high-power, deep-UV, and extreme environment applications. Hydrogen can affect the conductivity of β-Ga₂O₃ through the introduction of shallow donors and the passivation of deep acceptors. This work is a study of the interaction of H with VGa deep acceptors as well as other impurities in β-Ga₂O₃ by IR spectroscopy and complementary theory.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Michael Stavola, W. Beall Fowler, Amanda Portoff, Andrew Venzie, Evan R. Glaser, and Stephen J. Pearton "O-H centers in β-Ga₂O₃ with a Ga(1) vacancy at their core", Proc. SPIE 12887, Oxide-based Materials and Devices XV, 1288708 (15 March 2024); https://doi.org/10.1117/12.3009619

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