Poster + Paper
12 March 2024 Design of a monolithic integrable differential polarization phase shifter using an optimized InGaAsP strained multi-quantum well layer stack
K. Mehrabi, W. Yao, J. J. G. M. Van der Tol
Author Affiliations +
Conference Poster
Abstract
Polarization handling devices are essential elements in photonic integrated circuits. In this paper, a phase shifter for applying different phase shift on transverse electric (TE) and transverse magnetic (TM) modes is presented. By optimizing a strain-enhanced InGaAsP multiquantum well structure the birefringence is increased and the phase shift between TE and TM modes is enlarged. The simulation results indicate that with a low driving voltage of 2 V and a small length of 2 mm, a 2π phase shift difference between TE and TM modes over 100 nm wavelength around the c-band is achieved.
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Mehrabi, W. Yao, and J. J. G. M. Van der Tol "Design of a monolithic integrable differential polarization phase shifter using an optimized InGaAsP strained multi-quantum well layer stack", Proc. SPIE 12889, Integrated Optics: Devices, Materials, and Technologies XXVIII, 1288918 (12 March 2024); https://doi.org/10.1117/12.3007218
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Phase shifts

Polarization

Absorption

Quantum wells

Design

Photonic integrated circuits

Quantum confinement

Back to Top