12 March 2024Design of a monolithic integrable differential polarization phase shifter using an optimized InGaAsP strained multi-quantum well layer stack
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Polarization handling devices are essential elements in photonic integrated circuits. In this paper, a phase shifter for applying different phase shift on transverse electric (TE) and transverse magnetic (TM) modes is presented. By optimizing a strain-enhanced InGaAsP multiquantum well structure the birefringence is increased and the phase shift between TE and TM modes is enlarged. The simulation results indicate that with a low driving voltage of 2 V and a small length of 2 mm, a 2π phase shift difference between TE and TM modes over 100 nm wavelength around the c-band is achieved.
K. Mehrabi,W. Yao, andJ. J. G. M. Van der Tol
"Design of a monolithic integrable differential polarization phase shifter using an optimized InGaAsP strained multi-quantum well layer stack", Proc. SPIE 12889, Integrated Optics: Devices, Materials, and Technologies XXVIII, 1288918 (12 March 2024); https://doi.org/10.1117/12.3007218
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K. Mehrabi, W. Yao, J. J. G. M. Van der Tol, "Design of a monolithic integrable differential polarization phase shifter using an optimized InGaAsP strained multi-quantum well layer stack," Proc. SPIE 12889, Integrated Optics: Devices, Materials, and Technologies XXVIII, 1288918 (12 March 2024); https://doi.org/10.1117/12.3007218